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RJK2009DPM-00#T0

Part No : RJK2009DPM-00#T0
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 200V 40A TO3PFM
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 7,539 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 72nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 20A, 10V
Mounting Through Hole
Case / Package TO-3PFM
Dimension TO-3PFM, SC-93-3
Win Source Part Number 1092294-RJK2009DPM-00#T0
Popularity Medium
Fake Threat In the Open Market 30 pct.
Supply and Demand Status Balance
RJK2009DPM-00#T0, produced by Renesas Electronics America, is a N-Channel MOSFET transistor in TO-3PFM Through Hole package. The features include 200V drain-source breakdown voltage, 40A (Ta) continuous drain current at 25°C ,
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 72nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 20A, 10V
Mounting Through Hole
Case / Package TO-3PFM
Dimension TO-3PFM, SC-93-3
Win Source Part Number 1092294-RJK2009DPM-00#T0
Popularity Medium
Fake Threat In the Open Market 30 pct.
Supply and Demand Status Balance
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