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2SA1977-T1B-A

Part No 2SA1977-T1B-A
Manufacturer CEL
Catalog RF Transistors (BJT)
Description RF TRANSISTOR PNP SOT-23
Datasheet
2SA1977-T1B-A Datasheet
Sample
ECAD Module ECAD
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Shipping Information

Shipped from HK warehouse
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Pricing & Ordering $0.544 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
65+
$0.8060
$52.390
155+
$0.6620
$102.610
235+
$0.6410
$150.635
325+
$0.6200
$201.500
420+
$0.6000
$252.000
560+
$0.5380
$301.280
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 1,230 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer CEL
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 8.5GHz
Noise Figure (dB Typ @ f) 1.5dB @ 1GHz
Gain 12dB
Maximum Power Dissipation 200mW
Typical Gain (hFE) (Min) 20 @ 20mA, 8V
Maximum Current Collector 50mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Win Source Part Number 127756-2SA1977-T1B-A
Popularity Medium
Fake Threat In the Open Market 71 pct.
Supply and Demand Status Balance

Description

The CEL 2SA1977-T1B-A is a PNP transistor that provides high gain of 20 at 20mA and 8V. It has a maximum collector-emitter breakdown voltage of 12V and a maximum current collector of 50mA. The transistor operates in a temperature range of up to 150°C and comes in an SOT-23 package. The 2SA1977-T1B-A is ideal for applications that require high gain and low power consumption.

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