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HN3C10FUTE85LF

TRANSISTOR NPN US6
rohs
Availability: 6,000 In Stock
The HN3C10FUTE85LF is defined as RF Transistors(BJT) ,included in Discrete Semiconductor Products group. The designer and manufactured of HN3C10FUTE85LF is Toshiba Semiconductor and Storage. It is available in WIN SOURCE Shenzhen warehouse. The storage code of HN3C10FUTE85LF is 147344. More detailed data for HN3C10FUTE85LF , feel free to contact us.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Gain 11.5dB
Maximum Power Dissipation 200mW
Typical Gain (hFE) (Min) 80 @ 20mA, 10V
Maximum Current Collector 80mA
Mounting SMD (SMT)
Case / Package US6
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 109093-HN3C10FUTE85LF
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 7GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1GHz
Gain 11.5dB
Maximum Power Dissipation 200mW
Typical Gain (hFE) (Min) 80 @ 20mA, 10V
Maximum Current Collector 80mA
Mounting SMD (SMT)
Case / Package US6
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 109093-HN3C10FUTE85LF
HN3C10FUTE85LF Price

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HN3C10FUTE85LF In Stock

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HN3C10FUTE85LF RF Transistors(BJT)

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