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STB13N60M2

Name: STB13N60M2
Brand: STMicroelectronics
SKU: 677907
Availability: InStock
Rating: 5 (18 reviews)

Part No	STB13N60M2
Manufacturer	STMicroelectronics
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 600V 11A D2PAK
Datasheet	STB13N60M2 Datasheet
Sample
ECAD Module

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Shipping Information

Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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Pricing & Ordering $1.476

Quantity

Unit Price

Ext. Price

25+

$2.0380

$50.950

60+

$1.6720

$100.320

93+

$1.6200

$150.660

128+

$1.5680

$200.704

166+

$1.5150

$251.490

221+

$1.3590

$300.339

* The above prices does not include taxes and freight rates, which will be calculated on the order pages.

Availability: 7,500 pieces

MOQ: 25 pcs

Order Increment : 1 pcs

Qty:

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Products specifications

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	MDmesh™ II Plus
Package	Tape & Reel
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	580 pF @ 100 V
Power Dissipation (Max)	110W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	STB13
Standard Package	1,000 pcs
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	677907-STB13N60M2
Fake Threat In the Open Market	31pct.

Description

STB13N60M2 - N-channel 600 V, 0.280 ohm typ., 11 A MDmesh M2 Power MOSFET in D2PAK package

The STB13N60M2 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, which is renowned for its excellence in semiconductor technology. This device is part of the MDmesh™ M2 series that features state-of-the-art STripFET™ technology, providing superior switching performance and high avalanche ruggedness.

Key Features

Voltage Rating: The STB13N60M2 is designed to handle continuous voltages up to 600 V, making it suitable for high voltage applications.
Low On-Resistance: With a typical on-resistance of just 0.280 ohms, this MOSFET ensures high efficiency and low conduction losses.
Current Capacity: It can deliver a continuous current of 11 A, allowing it to drive sizeable loads with ease.
Package: Housed in a robust D2PAK package, the STB13N60M2 offers excellent thermal performance and is suitable for compact designs.
High dV/dt Capability: This device can handle fast switching, with high dV/dt capability, which is essential for reducing switching losses.
100% Avalanche Tested: Each unit is guaranteed to withstand high-energy pulses in the avalanche and commutation modes, ensuring reliability and durability.

Applications

The STB13N60M2 is ideal for a wide range of applications, including:

Switch Mode Power Supplies (SMPS)
LED Lighting
High-Efficiency DC-DC Converters
Motor Control
Power Factor Correction Circuits
Welding Equipment

Advantages

This MOSFET leverages STMicroelectronics' advanced MDmesh M2 technology, which combines the benefits of reduced gate charge and lower power dissipation, leading to higher efficiency and thermal performance. Its robust design and reliability make the STB13N60M2 a preferred choice for designers who require a high-performance Power MOSFET that can operate in demanding conditions.

With its superior electrical characteristics and thermal properties, the STB13N60M2 from STMicroelectronics represents a significant advancement in power MOSFET technology, catering to the needs of modern high-efficiency power conversion systems.