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STB6NM60N

Part No :
STB6NM60N
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
Low input capacitance and gate charge
rohs
Rated 5/5 based on 1 customer reviews
Availability (In-stock): 991 pieces
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 13nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 420pF @ 50V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 45W (Tc)
Rds On (Maximum) @ Id, Vgs 920 mOhm @ 2.3A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1260686-STB6NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Fake Threat In the Open Market 66 pct.
Supply and Demand Status Limited
Family Name STB6NM60N
Introduction Date May 09, 2007
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete
Alternative Parts
(Cross-Reference)
R6504KNJTL;  R6504ENJTL;  SiHFBC40S-E3; 
STMicroelectronics STB6NM60N is available at WIN SOURCE. Please review product page below for detailed information, including STB6NM60N price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STB6NM60N to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 13nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 420pF @ 50V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 45W (Tc)
Rds On (Maximum) @ Id, Vgs 920 mOhm @ 2.3A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1260686-STB6NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Fake Threat In the Open Market 66 pct.
Supply and Demand Status Limited
Family Name STB6NM60N
Introduction Date May 09, 2007
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete
Alternative Parts
(Cross-Reference)
R6504KNJTL;  R6504ENJTL;  SiHFBC40S-E3; 
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STB6NM60N Transistors - FETs, MOSFETs - RF

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