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STW56N65M2-4

Part No : STW56N65M2-4
Manufacturer : STMicroelectronics
Catalog : Transistors - FETs, MOSFETs - RF
Description : Extremely low gate charge
rohs
Rated 5/5 based on 1 customer reviews
Availability (In-stock): 580 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh M2
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 93nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3900pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 358W (Tc)
Rds On (Maximum) @ Id, Vgs 62 mOhm @ 24.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247-4L
Package TO-247-4
Win Source Part Number 1262379-STW56N65M2-4
Manufacturer Homepage www.st.com
Family Name STW56N65M2-4
Introduction Date December 15, 2014
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2033
Popularity Medium
Fake Threat In the Open Market 43 pct.
Supply and Demand Status Limited
Alternative Parts
(Cross-Reference)
IPZ60R041P6FKSA1;  IPZ60R070P6FKSA1;  IPZ60R099P6FKSA1; 
STMicroelectronics STW56N65M2-4 is available at WIN SOURCE. Please review product page below for detailed information, including STW56N65M2-4 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STW56N65M2-4 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh M2
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 93nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3900pF @ 100V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 358W (Tc)
Rds On (Maximum) @ Id, Vgs 62 mOhm @ 24.5A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247-4L
Package TO-247-4
Win Source Part Number 1262379-STW56N65M2-4
Manufacturer Homepage www.st.com
Family Name STW56N65M2-4
Introduction Date December 15, 2014
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2033
Popularity Medium
Fake Threat In the Open Market 43 pct.
Supply and Demand Status Limited
Alternative Parts
(Cross-Reference)
IPZ60R041P6FKSA1;  IPZ60R070P6FKSA1;  IPZ60R099P6FKSA1; 
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STW56N65M2-4 Transistors - FETs, MOSFETs - RF

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