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2SA1429-Y(T2OMI,FM

Part No : 2SA1429-Y(T2OMI,FM
Catalog : Transistors(BJT) - Single
Description : TRANS PNP 2A 80V SC71
rohs
Rated 5/5 based on 1 customer reviews
Availability (In-stock): 8,000 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 500mV @ 50mA, 1A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 70 @ 500mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package MSTM
Win Source Part Number 1004166-2SA1429-Y(T2OMI,FM
Popularity Medium
Fake Threat In the Open Market 62 pct.
Supply and Demand Status Balance
The 2SA1429-Y(T2OMI,FM from Toshiba Semiconductor and Storage is PNP Transistors(BJT) - Single device , available on MSTM Bulk, with 70 @ 500mA, 2V hFR, rated for operation over temperature range from 150°C (TJ).The maximum of V(br)CEO ,VCE ,Current Collector and Power Dissipation are 80V, 500mV @ 50mA, 1A, 2A and 1W.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 500mV @ 50mA, 1A
Collector Cut-off Current(Max) 1μA (ICBO)
Typical Gain (hFE) (Min) 70 @ 500mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package MSTM
Win Source Part Number 1004166-2SA1429-Y(T2OMI,FM
Popularity Medium
Fake Threat In the Open Market 62 pct.
Supply and Demand Status Balance
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