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SSM6N55NU,LF(T

MOSFET 2N-CH 30V 4A UDFN6
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SSM6N55NU,LF(T, produced by Toshiba Semiconductor and Storage, is a transistor in 6-μDFN(2x2) SMD (SMT) package. The features include 30V drain-source breakdown voltage, 4A continuous drain current at 25°C ,2.5V @ 100μA gate-source threshold voltage. SSM6N55NU,LF(T is used in the 150°C (TJ) operating temperature range.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 46 mOhm @ 4A, 10V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 2.5nC @ 4.5V
Max Input Capacitance 280pF @ 15V
Maximum Power Dissipation 1W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-μDFN(2x2)
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1102326-SSM6N55NU,LF(T
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 46 mOhm @ 4A, 10V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 2.5nC @ 4.5V
Max Input Capacitance 280pF @ 15V
Maximum Power Dissipation 1W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-μDFN(2x2)
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 1102326-SSM6N55NU,LF(T
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SSM6N55NU,LF(T Transistors - FETs, MOSFETs - RF

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