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TK100E10N1,S1X

Part No :
TK100E10N1,S1X
Catalog :
FETs - Single
Description :
Trans MOSFET N-CH Si 100V 207A 3-Pin(3+Tab) TO-220 Magazine | MOSFET N-CH 100V 100A TO220
rohs
Rated 5/5 based on 1 customer reviews
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time :
Quantity
Price
Ext. Price
45+
$1.238
$55.710
100+
$1.047
$104.700
150+
$1.016
$152.400
205+
$0.984
$201.720
265+
$0.952
$252.280
355+
$0.857
$304.235
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 20,500 pieces can ship immediately
MOQ: 45 pcs
Order Increment : 1 pcs
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 100A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3.4mOhm at 50A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 140nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 8800pF at 50V
Power Dissipation (Maximum) 255W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level Not Applicable
Win Source Part Number 735206-TK100E10N1,S1X
Family Name TK100E10N1
Country of Origin China
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 51 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
TSM160N10CZ C0; STP180N10F3;  IPP120N10S403AKSA1; 
Toshiba Semiconductor and Storage TK100E10N1,S1X is available at WIN SOURCE. Please review product page below for detailed information, including TK100E10N1,S1X price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TK100E10N1,S1X to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 100A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 3.4mOhm at 50A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 140nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 8800pF at 50V
Power Dissipation (Maximum) 255W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level Not Applicable
Win Source Part Number 735206-TK100E10N1,S1X
Family Name TK100E10N1
Country of Origin China
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 51 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
TSM160N10CZ C0; STP180N10F3;  IPP120N10S403AKSA1; 
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