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TK25A60X5,S5X

Part No TK25A60X5,S5X
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET N-CH 600V 25A TO-220SIS
Sample
ECAD Module ECAD
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Pricing & Ordering $8.894 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
5+
$11.3830
$56.915
11+
$9.3400
$102.740
17+
$9.0480
$153.816
23+
$8.7570
$201.411
30+
$8.4650
$253.950
40+
$7.5890
$303.560
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 1,190 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 25A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 140mOhm at 7.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 1.2mA
Gate Charge (Qg) (Maximum) at Vgs 60nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 2400pF at 300V
Power Dissipation (Maximum) 45W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-220SIS
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 727797-TK25A60X5，S5X(
Popularity Low
Fake Threat In the Open Market 29 pct.
Supply and Demand Status Limited

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance, N-channel transistor designed for use in discrete semiconductor products. It features a drive voltage of 10V, a maximum power dissipation of 45W, and a temperature range of -55°C to 150°C. The transistor is mounted through a hole and packaged in a TO-220SIS package. It has a Vds drain-source breakdown voltage of 600V and an Id continuous drain current of 25A. The Rds on (maximum) at Id, Vgs is 140mOhm at 7.5A, 10V, and the gate charge (Qg) (maximum) at Vgs is 60nC at 10V. The input capacitance (Ciss) (maximum) at Vds is 2400pF at 300V. Its popularity is low in the market, and the supply and demand status is limited.

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