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HN3C51F-GR

TRANS 2NPN 120V 0.1A SM6
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Availability: 1 In Stock
Toshiba Semiconductor and Storage HN3C51F-GR is available at WIN SOURCE. Please review product page below for detailed information, including HN3C51F-GR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HN3C51F-GR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 6V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SM6
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 114781-HN3C51F-GR
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 6V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SM6
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 114781-HN3C51F-GR
HN3C51F-GR Price

HN3C51F-GR Datasheet
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HN3C51F-GR Transistors(BJT) - Arrays

Image
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