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HN4A51JTE85LF

TRANS 2PNP 120V 0.1A SMV
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Availability: 15,565 In Stock
Toshiba Semiconductor and Storage HN4A51JTE85LF is available at WIN SOURCE. Please review product page below for detailed information, including HN4A51JTE85LF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for HN4A51JTE85LF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 6V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SMV
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 103371-HN4A51JTE85LF
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 6V
Maximum Power Dissipation 300mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SMV
Storage Condition Dry storage cabinet & Humidity protection package
Win Source Part Number 103371-HN4A51JTE85LF
HN4A51JTE85LF Price

HN4A51JTE85LF Datasheet
HN4A51JTE85LF Application

HN4A51JTE85LF Replacement
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