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2N5087G

Part No : 2N5087G
Manufacturer : ON Semiconductor
Catalog : Transistors(BJT) - Single
Description : TRANS PNP 50V 0.05A TO-92
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 9,633 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 250 @ 100μA, 5V
Maximum Power Dissipation 625mW
Frequency - Transition 40MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 197466-2N5087G
Popularity Medium
Fake Threat In the Open Market 38 pct.
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
The 2N5087G from ON Semiconductor is PNP Transistors(BJT) - Single device , available on TO-92-3 Bulk, with 250 @ 100μA, 5V hFR, rated for operation over temperature range from -55°C to 150°C (TJ).The maximum of V(br)CEO ,VCE ,Current Collector and Power Dissipation are 50V, 300mV @ 1mA, 10mA, 50mA and 625mW.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Bulk
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 300mV @ 1mA, 10mA
Collector Cut-off Current(Max) 50nA (ICBO)
Typical Gain (hFE) (Min) 250 @ 100μA, 5V
Maximum Power Dissipation 625mW
Frequency - Transition 40MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 197466-2N5087G
Popularity Medium
Fake Threat In the Open Market 38 pct.
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
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2N5087G Transistors(BJT) - Single

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