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2SC3265-Y,LF

Part No : 2SC3265-Y,LF
Catalog : Transistors(BJT) - Single
Description : TRANS NPN 25V 0.8A S-MINI
rohs
Rated 5/5 based on 1 customer reviews
Availability (In-stock): 60,866 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 400mV @ 20mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 160 @ 100mA, 1V
Maximum Power Dissipation 200mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236
Win Source Part Number 098614-2SC3265-Y,LF
Popularity Medium
Fake Threat In the Open Market 33 pct.
Supply and Demand Status Sufficient
The 2SC3265-Y,LF from Toshiba Semiconductor and Storage is NPN Transistors(BJT) - Single device , available on TO-236 Reel - TR, with 160 @ 100mA, 1V hFR, rated for operation over temperature range from 150°C (TJ).The maximum of V(br)CEO ,VCE ,Current Collector and Power Dissipation are 25V, 400mV @ 20mA, 500mA, 800mA and 200mW.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 400mV @ 20mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 160 @ 100mA, 1V
Maximum Power Dissipation 200mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236
Win Source Part Number 098614-2SC3265-Y,LF
Popularity Medium
Fake Threat In the Open Market 33 pct.
Supply and Demand Status Sufficient
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