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2SC3325-O(TE85L,F)

Part No : 2SC3325-O(TE85L,F)
Catalog : Transistors(BJT) - Single
Description : TRANS NPN 50V 0.5A S-MINI
rohs
Rated 5/5 based on 1 customer reviews
Availability (In-stock): 1,400 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 70 @ 100mA, 1V
Maximum Power Dissipation 200mW
Frequency - Transition 300MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 121940-2SC3325-O(TE85L,F)
Popularity Medium
Fake Threat In the Open Market 52 pct.
Supply and Demand Status Balance
The 2SC3325-O(TE85L,F) from Toshiba Semiconductor and Storage is NPN Transistors(BJT) - Single device , available on S-Mini Reel - TR, with 70 @ 100mA, 1V hFR, rated for operation over temperature range from 150°C (TJ).The maximum of V(br)CEO ,VCE ,Current Collector and Power Dissipation are 50V, 250mV @ 10mA, 100mA, 500mA and 200mW.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 250mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 70 @ 100mA, 1V
Maximum Power Dissipation 200mW
Frequency - Transition 300MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 121940-2SC3325-O(TE85L,F)
Popularity Medium
Fake Threat In the Open Market 52 pct.
Supply and Demand Status Balance
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