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BC639-16ZL1G

Part No :
BC639-16ZL1G
Manufacturer :
Catalog :
Transistors(BJT) - Single
Description :
TRANS NPN 80V 1A TO-92
rohs
Rated 5/5 based on 1 customer reviews
Availability (Stock & Lead time): 100 pieces
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging AMMO PACKAGE
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 500mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 2V
Maximum Power Dissipation 625mW
Frequency - Transition 200MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 118696-BC639-16ZL1G
Popularity Medium
Fake Threat In the Open Market 31 pct.
Supply and Demand Status Limited
The BC639-16ZL1G from ON Semiconductor is NPN Transistors(BJT) - Single device , available on TO-92-3 AMMO PACKAGE, with 100 @ 150mA, 2V hFR, rated for operation over temperature range from -55°C to 150°C (TJ).The maximum of V(br)CEO ,VCE ,Current Collector and Power Dissipation are 80V, 500mV @ 50mA, 500mA, 1A and 625mW.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging AMMO PACKAGE
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 500mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 100 @ 150mA, 2V
Maximum Power Dissipation 625mW
Frequency - Transition 200MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 118696-BC639-16ZL1G
Popularity Medium
Fake Threat In the Open Market 31 pct.
Supply and Demand Status Limited
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