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BDT60C

Part No : BDT60C
Manufacturer : Bourns Inc.
Catalog : Transistors(BJT) - Single
Description : TRANS PNP DARL 120V 4A
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 83 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Bourns Inc.
Packaging Tube/Rail
Status Obsolete(EOL)
Transistor Polarity PNP - Darlington
Maximum Current Collector 4A
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 2.5V @ 6mA, 1.5A
Collector Cut-off Current(Max) 500μA
Typical Gain (hFE) (Min) 750 @ 1.5A, 3V
Maximum Power Dissipation 2W
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Win Source Part Number 201018-BDT60C
Popularity Medium
Fake Threat In the Open Market 36 pct.
Supply and Demand Status Limited
The BDT60C from Bourns Inc. is PNP - Darlington Transistors(BJT) - Single device , available on TO-220 Tube/Rail, with 750 @ 1.5A, 3V hFR, rated for operation over temperature range from -65°C to 150°C (TJ).The maximum of V(br)CEO ,VCE ,Current Collector and Power Dissipation are 120V, 2.5V @ 6mA, 1.5A, 4A and 2W.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Bourns Inc.
Packaging Tube/Rail
Status Obsolete(EOL)
Transistor Polarity PNP - Darlington
Maximum Current Collector 4A
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 2.5V @ 6mA, 1.5A
Collector Cut-off Current(Max) 500μA
Typical Gain (hFE) (Min) 750 @ 1.5A, 3V
Maximum Power Dissipation 2W
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Win Source Part Number 201018-BDT60C
Popularity Medium
Fake Threat In the Open Market 36 pct.
Supply and Demand Status Limited
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BDT60C Transistors(BJT) - Single

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