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NSS20201LT1G

Part No NSS20201LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 20V 2A SOT-23
Datasheet
Sample
ECAD Module ECAD
rohs

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Pricing & Ordering $0.207 Historical reference price : is the price that a customer announces that it is willing to pay for this component in the previous period, only for reference.
Quantity
Unit Price
Ext. Price
175+
$0.2910
$50.925
420+
$0.2390
$100.380
650+
$0.2320
$150.800
895+
$0.2240
$200.480
1,155+
$0.2170
$250.635
1,550+
$0.1940
$300.700
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability: 29,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 20V
Max Vce (sat) 100mV @ 200mA, 2A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 500mA, 2V
Maximum Power Dissipation 460mW
Frequency - Transition 150MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 060572-NSS20201LT1G
Popularity Medium
Fake Threat In the Open Market 71 pct.
Supply and Demand Status Limited

Description

Product Overview: NSS20201LT1G by ON Semiconductor

The NSS20201LT1G is a high-performance, NPN bipolar transistor manufactured by ON Semiconductor, a leading supplier of semiconductor-based solutions. This device is designed for general-purpose amplifier applications and is known for its reliability and efficiency. It is housed in a compact SOT-23 package, making it suitable for space-constrained applications.

Key Features

  • High Current Gain Bandwidth Product: The NSS20201LT1G offers an impressive current gain bandwidth product (fT) of 100 MHz, which makes it suitable for amplification in high-frequency applications.
  • Low Collector-Emitter Saturation Voltage: The low VCE(sat) of this transistor ensures minimal voltage drop across the collector-emitter terminals when the transistor is in the on-state, leading to improved power efficiency.
  • High Collector Current: It supports a continuous collector current (IC) of up to 2 A, making it capable of handling significant current loads.
  • Complementary PNP Type Available: For applications requiring a complementary PNP transistor, ON Semiconductor offers a counterpart to the NSS20201LT1G, facilitating the design of push-pull amplifier stages.

Applications

The NSS20201LT1G is versatile and can be used in various electronic circuits. Some of the typical applications include:

  • Audio amplifiers
  • Signal processing
  • Power management
  • Switching and linear amplification
  • Driver stages in hi-fi amplifiers and television circuits

Environmental and Quality Certifications

ON Semiconductor is committed to environmental stewardship and product quality. The NSS20201LT1G complies with the following standards:

  • Pb-Free and RoHS compliant
  • Halogen-Free

Summary

The NSS20201LT1G by ON Semiconductor is a robust NPN bipolar transistor that excels in general-purpose amplification tasks. Its high current gain bandwidth, low saturation voltage, and high collector current make it an excellent choice for designers looking for a reliable transistor for high-performance applications. With the availability of a complementary PNP device and adherence to environmental standards, the NSS20201LT1G stands out as a versatile component for modern electronic designs.

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