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SI5915DC-T1-GE3

Part No :
SI5915DC-T1-GE3
Manufacturer :
Catalog :
Transistors - FETs, MOSFETs - RF
Description :
MOSFET 2P-CH 8V 3.4A 1206-8
rohs
Rated 5/5 based on 1 customer reviews
Availability (In-stock): 30,000 pieces
Shipped from :
HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 3.4A
Maximum Rds On at Id,Vgs 70 mOhm @ 3.4A, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 9nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 1096097-SI5915DC-T1-GE3
Popularity Medium
Fake Threat In the Open Market 68 pct.
Supply and Demand Status Sufficient
SI5915DC-T1-GE3, produced by Vishay, is a transistor in 1206-8 ChipFET SMD (SMT) package. The features include 8V drain-source breakdown voltage, 3.4A continuous drain current at 25°C ,450mV @ 250μA (Min) gate-source threshold voltage. SI5915DC-T1-GE3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 3.4A
Maximum Rds On at Id,Vgs 70 mOhm @ 3.4A, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 9nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 1096097-SI5915DC-T1-GE3
Popularity Medium
Fake Threat In the Open Market 68 pct.
Supply and Demand Status Sufficient
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SI5915DC-T1-GE3 Transistors - FETs, MOSFETs - RF

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