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SI7100DN-T1-GE3

Part No : SI7100DN-T1-GE3
Manufacturer : Vishay
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 8V 35A PPAK 1212-8
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 7,215 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 105nC @ 8V
Max Input Capacitance 3810pF @ 4V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 15A, 4.5V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096127-SI7100DN-T1-GE3
Popularity Medium
Fake Threat In the Open Market 36 pct.
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
SI7100DN-T1-GE3, produced by Vishay, is a N-Channel MOSFET transistor in PowerPAK 1212-8 SMD (SMT) package. The features include 8V drain-source breakdown voltage, 35A (Tc) continuous drain current at 25°C ,1V @ 250μA gate-source threshold voltage. SI7100DN-T1-GE3 is used in the -50°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 105nC @ 8V
Max Input Capacitance 3810pF @ 4V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 15A, 4.5V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096127-SI7100DN-T1-GE3
Popularity Medium
Fake Threat In the Open Market 36 pct.
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
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SI7100DN-T1-GE3 Transistors - FETs, MOSFETs - RF

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