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SI7216DN-T1-GE3

Part No : SI7216DN-T1-GE3
Manufacturer : Vishay
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET 2N-CH 40V 6A PPAK 1212-8
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 1 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 32 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 670pF @ 20V
Maximum Power Dissipation 20.8W
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 1096147-SI7216DN-T1-GE3
Popularity Medium
Fake Threat In the Open Market 66 pct.
Supply and Demand Status Limited
SI7216DN-T1-GE3, produced by Vishay, is a transistor in PowerPAK 1212-8 Dual SMD (SMT) package. The features include 40V drain-source breakdown voltage, 6A continuous drain current at 25°C ,3V @ 250μA gate-source threshold voltage. SI7216DN-T1-GE3 is used in the -50°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 32 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 670pF @ 20V
Maximum Power Dissipation 20.8W
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8 Dual
Win Source Part Number 1096147-SI7216DN-T1-GE3
Popularity Medium
Fake Threat In the Open Market 66 pct.
Supply and Demand Status Limited
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SI7216DN-T1-GE3 Transistors - FETs, MOSFETs - RF

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