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SI9407BDY-T1-E3

Part No : SI9407BDY-T1-E3
Manufacturer : Vishay
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET P-CH 60V 4.7A 8-SOIC
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
95+
$0.532
$50.540
225+
$0.450
$101.250
345+
$0.437
$150.765
475+
$0.423
$200.925
615+
$0.409
$251.535
815+
$0.369
$300.735
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 100 pieces can ship immediately
MOQ: 95 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 600pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.4W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1096347-SI9407BDY-T1-E3
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 56 pct.
Supply and Demand Status Limited
SI9407BDY-T1-E3, produced by Vishay, is a P-Channel MOSFET transistor in 8-SO SMD (SMT) package. The features include 60V drain-source breakdown voltage, 4.7A (Tc) continuous drain current at 25°C ,3V @ 250μA gate-source threshold voltage. SI9407BDY-T1-E3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 600pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.4W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 3.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1096347-SI9407BDY-T1-E3
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 56 pct.
Supply and Demand Status Limited
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SI9407BDY-T1-E3 Transistors - FETs, MOSFETs - RF

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