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SIJ462DP-T1-GE3

Part No : SIJ462DP-T1-GE3
Manufacturer : Vishay
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 60V 46.5A PPAK SO-8
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
345+
$0.147
$50.715
810+
$0.124
$100.440
1,240+
$0.121
$150.040
1,710+
$0.117
$200.070
2,215+
$0.113
$250.295
2,945+
$0.102
$300.390
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 1 pieces can ship immediately
MOQ: 345 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?
Products specifications
Alternative Parts
(Cross-Reference)
NTMFS5C670NLT1G;   NTMFS5C670NLT3G; 
Supply and Demand Status Limited
Fake Threat 58 pct.
Popularity High
Is this a common-used part? Yes
Win Source Part Number 1096447-SIJ462DP-T1-GE3
Dimension PowerPAK SO-8
Case / Package PowerPAK SO-8
Mounting SMD (SMT)
Maximum Rds On at Id,Vgs 8 mOhm @ 20A, 10V
Max Input Capacitance 1400pF @ 30V
Max Gate Charge 32nC @ 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Continuous Drain Current at 25°C 46.5A(Tc)
Drain-Source Breakdown Voltage 60V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer Vishay
Categories Discrete Semiconductor Products
SIJ462DP-T1-GE3, produced by Vishay, is a N-Channel MOSFET transistor in PowerPAK SO-8 SMD (SMT) package. The features include 60V drain-source breakdown voltage, 46.5A(Tc) continuous drain current at 25°C ,2.5V @ 250μA gate-source threshold voltage.
Products specifications
Alternative Parts
(Cross-Reference)
NTMFS5C670NLT1G;   NTMFS5C670NLT3G; 
Supply and Demand Status Limited
Fake Threat 58 pct.
Popularity High
Is this a common-used part? Yes
Win Source Part Number 1096447-SIJ462DP-T1-GE3
Dimension PowerPAK SO-8
Case / Package PowerPAK SO-8
Mounting SMD (SMT)
Maximum Rds On at Id,Vgs 8 mOhm @ 20A, 10V
Max Input Capacitance 1400pF @ 30V
Max Gate Charge 32nC @ 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Continuous Drain Current at 25°C 46.5A(Tc)
Drain-Source Breakdown Voltage 60V
Technology MOSFET
Polarity N-Channel
Status Active
Packaging Reel - TR
Manufacturer Vishay
Categories Discrete Semiconductor Products
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SIJ462DP-T1-GE3 Transistors - FETs, MOSFETs - RF

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