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SIR642DP-T1-GE3

Part No : SIR642DP-T1-GE3
Manufacturer : Vishay
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 40V 60A PPAK SO-8
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
25+
$2.075
$51.875
60+
$1.756
$105.360
90+
$1.703
$153.270
125+
$1.649
$206.125
160+
$1.596
$255.360
210+
$1.437
$301.770
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 7,955 pieces can ship immediately
MOQ: 25 pcs
Order Increment : 1 pcs
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 4155pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.8W (Ta), 41.7W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096474-SIR642DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 69 pct.
Supply and Demand Status Balance
SIR642DP-T1-GE3, produced by Vishay, is a N-Channel MOSFET transistor in PowerPAK SO-8 SMD (SMT) package. The features include 40V drain-source breakdown voltage, 60A (Tc) continuous drain current at 25°C ,2.3V @ 250μA gate-source threshold voltage. SIR642DP-T1-GE3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 84nC @ 10V
Max Input Capacitance 4155pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.8W (Ta), 41.7W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 1096474-SIR642DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Fake Threat In the Open Market 69 pct.
Supply and Demand Status Balance
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