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SIS427EDN-T1-GE3

Part No : SIS427EDN-T1-GE3
Manufacturer : Vishay
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET P-CH 30V 50A 1212-8
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Rated 5/5 based on 1 customer reviews
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Supplier Lead-Time : Call for availability
Quantity
Price
Ext. Price
120+
$0.424
$50.880
280+
$0.359
$100.520
435+
$0.348
$151.380
595+
$0.337
$200.515
765+
$0.327
$250.155
1,020+
$0.294
$299.880
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
Availability (In-stock): 7,646 pieces can ship immediately
MOQ: 120 pcs
Order Increment : 1 pcs
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Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 1930pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 10.6 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096497-SIS427EDN-T1-GE3
Popularity Medium
Fake Threat In the Open Market 62 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
DMG7401SFGQ-13;  SIS439DNT-T1-GE3;  SiS427EDN-T1-GE3;  Si7617DN-T1-GE3;  
SIS427EDN-T1-GE3, produced by Vishay, is a P-Channel MOSFET transistor in PowerPAK 1212-8 SMD (SMT) package. The features include 30V drain-source breakdown voltage, 50A (Tc) continuous drain current at 25°C ,2.5V @ 250μA gate-source threshold voltage. SIS427EDN-T1-GE3 is used in the -55°C to 150°C (TJ) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 1930pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 10.6 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096497-SIS427EDN-T1-GE3
Popularity Medium
Fake Threat In the Open Market 62 pct.
Supply and Demand Status Balance
Alternative Parts
(Cross-Reference)
DMG7401SFGQ-13;  SIS439DNT-T1-GE3;  SiS427EDN-T1-GE3;  Si7617DN-T1-GE3;  
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SIS427EDN-T1-GE3 Transistors - FETs, MOSFETs - RF

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