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SIS888DN-T1-GE3

Part No : SIS888DN-T1-GE3
Manufacturer : Vishay
Catalog : Transistors - FETs, MOSFETs - RF
Description : MOSFET N-CH 150V 20.2A 1212-8S
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Rated 5/5 based on 1 customer reviews
Availability (In-stock): 43,950 pieces
Shipped from : HK warehouse
Expected Shipping Date :
Ship today if order in (HKT)
Products specifications
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Gate-Source Threshold Voltage 4.2V @ 250μA
Max Gate Charge 14.5nC @ 10V
Max Input Capacitance 420pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 52W (Tc)
Maximum Rds On at Id,Vgs 58 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TA)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8S (3.3x3.3)
Dimension PowerPAK 1212-8S
Win Source Part Number 1096503-SIS888DN-T1-GE3
Popularity Medium
Fake Threat In the Open Market 70 pct.
Supply and Demand Status Sufficient
SIS888DN-T1-GE3, produced by Vishay, is a N-Channel MOSFET transistor in PowerPAK 1212-8S (3.3x3.3) SMD (SMT) package. The features include 150V drain-source breakdown voltage, 20.2A (Tc) continuous drain current at 25°C ,4.2V @ 250μA gate-source threshold voltage. SIS888DN-T1-GE3 is used in the -55°C to 150°C (TA) operating temperature range.
Products specifications
ECAD Module
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Gate-Source Threshold Voltage 4.2V @ 250μA
Max Gate Charge 14.5nC @ 10V
Max Input Capacitance 420pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 52W (Tc)
Maximum Rds On at Id,Vgs 58 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TA)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8S (3.3x3.3)
Dimension PowerPAK 1212-8S
Win Source Part Number 1096503-SIS888DN-T1-GE3
Popularity Medium
Fake Threat In the Open Market 70 pct.
Supply and Demand Status Sufficient
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SIS888DN-T1-GE3 Transistors - FETs, MOSFETs - RF

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