IRFR18N15DTRPBF

Part No IRFR18N15DTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 18A DPAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 125 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 130353-IRFR18N15DTRPBF
Popularity Medium
Supply and Demand Status Limited

Description

The Infineon Technologies IRFR18N15DTRPBF is a N-Channel MOSFET transistor with a power dissipation of 110W (Tc). This surface-mount device is packaged in a D-Pak case and has a drive voltage of 10V. It has a drain-source breakdown voltage of 150V and a continuous drain current of 18A at 25°C. The gate-source threshold voltage is 5.5V at 250μA and the maximum gate charge is 43nC at 10V. The maximum input capacitance is 900pF at 25V, and the maximum Rds On at Id,Vgs is 125 mOhm at 11A, 10V. It has a temperature range of -55°C to 175°C (TJ) and its dimension is TO-252-3, DPak (2 Leads + Tab), SC-63. in the open market. The supply and demand status is limited.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
75+ $0.6970 $52.2750
175+ $0.5720 $100.1000
275+ $0.5540 $152.3500
375+ $0.5360 $201.0000
485+ $0.5180 $251.2300
650+ $0.4650 $302.2500
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 568 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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