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Same model may have multiple batches, images only for reference.
BC807-25QB-QZ Real Image
Same model may have multiple batches, images only for reference.

BC807-25QB-QZ

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Part No BC807-25QB-QZ
Manufacturer Nexperia USA Inc.
Catalog Custom Parts (B - D)
Description TRANS PNP 45V 0.5A DFN1110D-3 / Bipolar (BJT) Transistor PNP 45 V 500 mA 80MHz 350 mW Surface Mount, Wettable Flank DFN1110D-3
Datasheet
BC807-25QB-QZ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Nexperia USA Inc.
Package Tape & Reel
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V
Power - Max 350 mW
Frequency - Transition 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad
Supplier Device Package DFN1110D-3
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 1727-BC807-25QB-QZDKR,1727-BC807-25QB-QZTR,934662714147,1727-BC807-25QB-QZCT
Standard Package 5,000
Win Source Part Number 1164227-BC807-25QB-QZ
Ultra Librarian 3D Model   Symbol, Footprint, 3D Model

Description

The Nexperia USA Inc. BC807-25QB-QZ is a PNP transistor with a power-max of 350 mW and a voltage - collector emitter breakdown (Max) of 45 V.

  • Current - Collector (Ic) (Max): 500 mA
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
  • Frequency - Transition: 80MHz
  • Mounting Type: surface mount, wettable flank
  • Package / Case: 3-XDFN exposed pad
  • Supplier Device Package: DFN1110D-3
  • MSL Level: 3 (168 Hours)
  • REACH: unaffected
  • HTSUS: 8541.21.0095

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