The Nexperia USA Inc. BC807-25QB-QZ is a PNP transistor with a power-max of 350 mW and a voltage - collector emitter breakdown (Max) of 45 V. The current - collector (Ic) (Max) is 500 mA, and the Vce saturation (Max) @ Ib, Ic is 700mV @ 50mA, 500mA. The current - collector cutoff (Max) is 100nA (ICBO), and the DC current gain (hFE) (Min) @ Ic, Vce is 160 @ 100mA, 1V. The frequency - transition is 80MHz, and the mounting type is surface mount, wettable flank. The package / case is 3-XDFN exposed pad, and the supplier device package is DFN1110D-3. The MSL level is 3 (168 Hours), and it is REACH unaffected. The HTSUS is 8541.21.0095. No further information is provided.