Ampleon Introduces 62% Efficiency Gen9HV LDMOS Transistors for Particle Accelerator Applications Leading RF Power Efficiency

Ampleon today announced the 750W Gen9HV LDMOS RF power transistor BLF13H9L750P, specifically designed for particle accelerator applications operating in the 1.3GHz spectrum.

The transistor is available in a ceramic 4-lead SOT539 package and is available in a flanged bolt-on package (BLF13H9L750P) and a flanged earless package (BLF13H9LS750P) that delivers over 62% efficiency, which is believed to be the highest efficiency in its class. With such high efficiency specifications, this transistor will help achieve significant power savings compared to other solid state competing devices. In addition, solid state methods require less maintenance, longer life cycles, and less physical space required than older devices based on klystrons and vacuum tube amplifiers, further reducing operating costs.

The BLF13H9L(S)750P transistor also has a market leading 17dB gain. The Ergen Semiconductor Gen9HV 50V LDMOS process was introduced in 2017 to produce highly consistent transistors, ensuring a high degree of reproducibility during production.

Author：Brittany Antonia （The author of article owns the copyright.）