High power density single-tube IGBT with TO-247PLUS package

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has further expanded its lineup of 1200 V single-tube IGBT products and introduced a new product series with a maximum current of 75 A. The TO-247PLUS package also integrates full-rated anti-parallel diodes. The new TO-247PLUS 3-pin and 4-pin packages meet the growing demand for higher power density and higher efficiency.

Typical applications requiring high power density 1200V IGBTs include frequency converters, photovoltaic inverters, and uninterruptible power supplies (UPS). Other applications include battery charging and energy storage systems.

Compared to the conventional TO-247-3 package, the new TO-247PLUS package can achieve twice the rated current. Due to the removal of the mounting holes of the standard TO-247 package, the PLUS package has a larger lead frame area and therefore can accommodate larger IGBT chips. 75 A 1200 V IGBTs with unchanged pin sizes are available now. A larger lead frame allows the TO-247PLUS package to have a lower thermal resistance, which improves heat dissipation.

The 1200 V IGBTs in the TO-247PLUS 3- and 4-pin packages increase system power density. In addition, they can reduce the number of parallel power devices, improve system efficiency or improve system cooling.

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Author：Brittany Antonia （The author of article owns the copyright.）