Littelfuse Introduces Expanded Series of Silicon Carbide Schottky Diodes to Reduce Switching Losses, Increase Efficiency and Durability

Suitable for applications that require increased reliability and thermal management

Littelfuse, Inc., a leader in the field of global circuit protection, today announced the launch of four new 1200V silicon carbide (SiC) Schottky diodes that are part of its 2nd generation product family. Posted in May.

The LSIC2SD120A08 series, LSIC2SD120A15 series, and LSIC2SD120A20 series are rated at 8A, 15A, and 20A, respectively, and are available in the mainstream TO-220-2L package. In addition, the LSIC2SD120C08 series is rated at 8A and is available in the TO-252-2L package. The second-generation Schottky diode combined p-n Schottky (MPS) device structure ensures increased surge immunity and reduced leakage current. Replacing the standard silicon bipolar power diodes with brand new 2nd generation silicon carbide Schottky diodes allows circuit designers to significantly reduce switching losses and withstand high inrush currents without thermal runaway, up to 175° Run at the junction temperature of C. This helps to greatly improve the efficiency and durability of power electronic systems.

Typical applications for the new 2nd generation silicon carbide Schottky diodes include:

Active Power Factor Correction (PFC)
The buck or boost stage of a DC-DC converter.
Inverter freewheeling diode
High frequency output rectification
Serviceable markets include industrial power supplies, solar power, industrial motor drives, welding and plasma cutting, electric vehicle charging stations, and induction cookers.

"The latest generation of silicon carbide Schottky diodes of the second generation enables circuit designers to reduce switching losses, withstand strong inrush currents without thermal runaway, and operate at higher junction temperatures." Littelfuse Power Supplies Michael Ketterer, global product marketing manager for semiconductors, said. "They provide more component options for circuit designers seeking to improve the efficiency, reliability and thermal management of the latest power electronic systems."

The second generation silicon carbide Schottky diodes provide the following key advantages:

The best-in-class capacitive storage charge and negligible reverse recovery current make these devices ideal for high-frequency power switching applications, ensuring extremely low switching losses and reducing the stress on the opposing switches.

The best-in-class forward voltage drop (VF) ensures low conduction losses.

The maximum junction temperature of 175°C provides greater design margins and more relaxed thermal management requirements.

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Author：Brittany Antonia （The author of article owns the copyright.）