Littelfuse Launches Ultra-Low-Resistance 1200V Silicon Carbide MOSFET at the 2018 APEC Conference

This product is designed to exceed the performance of silicon MOSFETs and IGBTs, enabling ultrafast switching in power conversion systems

Littelfuse, Inc., a global leader in the field of circuit protection, and Monolith Semiconductor Inc., a Texas company that develops SiC technology, today announced the launch of two 1200V silicon carbide (SiC) n-channel enhancement MOSFETs for its expanding first-generation power supplies. The semiconductor device combines fresh blood injection. Littelfuse formed a strategic partnership with Monolith in 2015 to develop power semiconductors for the industrial and automotive markets. This new silicon carbide MOSFET is the latest product jointly developed by both parties. These products were unveiled at the Littelfuse booth at the Applied Power Electronics Conference (APEC 2018).

The LSIC1MO120E0120 and LSIC1MO120E0160 silicon carbide MOSFETs have ultra-low on-resistance (RDS(ON)) of only 120 milliohms and 160 milliohms, respectively. These SiC MOSFETs can be used as power semiconductor switches in various power conversion systems and their performance in blocking voltage, characteristic on-resistance, and junction capacitance is significantly better than other silicon MOSFETs. It also combines high operating voltages and ultra-high switching speeds, which cannot be achieved with conventional power transistor solutions such as silicon IGBTs with similar current ratings and packaging.

Typical applications for these new silicon carbide MOSFETs include:

electric car
industrial machinery
Renewable energy sources (such as solar inverters)
Medical equipment
Switching power supply
Uninterrupted power supply (UPS)
motor driver
High voltage DC/DC converter
Induction heating

The new 1200V SiC MOSFET has the following key advantages:

The reduction in the number of passive filter components at the system level helps to increase power density and create optimized designs for high-frequency, high-efficiency applications.

Author：Brittany Antonia （The author of article owns the copyright.）