NXP MRFX1K80H transistor, 65V LDMOS technology to RF power design speed

NXP Semiconductors' MRFX1K80H LDMOS transistors are MRFX series of radio frequency (RF) MOSFET transistors, this series of devices using the latest LDMOS (lateral diffusion metal oxide semiconductor) technology. MRFX1K80H uses LDMOS technology to improve the output power of broadband applications while maintaining the appropriate output impedance.

The NXP MRFX1K80H LDMOS transistor provides 1800W of power at 65V continuous wave and is suitable for RF applications from 1.8 to 470 MHz and provides a 65: 1 voltage standing wave ratio (VSWR) at all phase angles. This device provides 50Ω matching impedance, can shorten the overall development time. The MRFX1K80H is designed for use with 30V to 65V expansion power supplies and high breakdown voltage characteristics to enhance reliability and improve efficiency. This high voltage resistance also reduces system current, limiting stress on the DC supply and reducing magnetic radiation. High output power also reduces the number of transistors, simplifies the power amplifier complexity, and reduces overall cost.

The MRFX1K80H is suitable for linear applications with appropriate bias and provides integrated electrostatic discharge (ESD) protection to improve Class C amplifier performance. MRFX1K80H target applications include industrial, scientific and medical (ISM) applications and broadcasting, aerospace and mobile radio equipment.

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  Author ：Brittany Antonia — WIN SOURCE ELECTRONICS

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