NTE2323 Real Image
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr NTE Electronics, Inc
Package Bag
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 200 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 10V
Power - Max 750 mW
Frequency - Transition 80MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case 14-DIP (0.300", 7.62mm)
Supplier Device Package 14-DIP
RoHS Status RoHS non-compliant
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2368-NTE2323
Standard Package 1
Win Source Part Number 1081625-NTE2323
Ultra Librarian 3D Model Ultra Librarian NTE2323 CAD Model

Description

The NTE2323 is a bipolar transistor manufactured by NTE Electronics, Inc.

  • Quality: This component is a high-quality transistor
  • Maximum Power: with a maximum power of 750mW
  • Maximum Voltage: a maximum voltage of 200V
  • Maximum Current: and a maximum current of 500mA.
  • Ideal For: It is ideal for use in various electronic devices, including industrial, defense, military, and aerospace applications.

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