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2DB1188P-13

Part No 2DB1188P-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 32V 2A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel package
Transistor Type PNP
Current - Collector (Ic) (Maximum) 2A
Voltage - Collector Emitter Breakdown (Maximum) 32V
Vce Saturation (Maximum) @ Ib, Ic 800mV @ 200mA, 2A
Current - Collector Cutoff (Maximum) 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 82 @ 500mA, 3V
Power - Max 1W
Frequency - Transition 120MHz
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package TO-243AA
Manufacturer Package SOT-89
Win Source Part Number 762160-2DB1188P-13
Family Name 2DB1188P
Introduction Date November 20, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2DB1188P-13 CAD Model

Description

Product Overview: 2DB1188P-13 by Diodes Incorporated

The 2DB1188P-13 is a cutting-edge PNP bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading company in the semiconductor industry. This high-performance transistor is specifically engineered to offer efficient current amplification and switching capabilities suitable for a broad range of electronic applications.

Key Features

  • Low VCE(SAT): The 2DB1188P-13 boasts a low collector-emitter saturation voltage, which enhances the overall efficiency of the device by minimizing power loss during operation.
  • High Current Gain Bandwidth Product (fT): With a high transition frequency, this transistor is capable of operating effectively at higher frequencies, making it suitable for amplification in audio and other signal processing applications.
  • Complementary NPN Type Available: For applications requiring a push-pull configuration, Diodes Incorporated offers a complementary NPN transistor that pairs well with the 2DB1188P-13, allowing for a balanced and efficient design.
  • RoHS Compliant: Adhering to environmental standards, the 2DB1188P-13 is RoHS compliant, ensuring that it is free from hazardous substances and suitable for use in a wide range of consumer electronics.

Applications

The versatility of the 2DB1188P-13 makes it an ideal choice for various applications, including but not limited to:

  • Power management systems
  • Signal amplification circuits
  • Audio amplifiers
  • Switching applications
  • Driver stages in hi-fi amplifiers and television circuits

Package and Quality Assurance

The 2DB1188P-13 is available in a SOT-23 package, which is widely used in the industry due to its small footprint and ease of integration into surface-mount technology (SMT) based PCB designs. Diodes Incorporated ensures that each unit of the 2DB1188P-13 meets stringent quality control standards, providing reliable and consistent performance for the end user.

With its robust construction, superior electrical characteristics, and compliance with environmental standards, the 2DB1188P-13 from Diodes Incorporated stands out as a superior choice for designers and engineers looking to incorporate a reliable PNP transistor into their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.2069 $57.9320
685+ $0.1698 $116.3130
1,055+ $0.1645 $173.5475
1,455+ $0.1592 $231.6360
1,880+ $0.1538 $289.1440
2,515+ $0.1379 $346.8185
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 280 pcs
Order Increment : 1 pcs
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