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RF4E080GNTR

Name: RF4E080GNTR
Brand: Rohm Semiconductor
SKU: 800676
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	RF4E080GNTR
Manufacturer	Rohm Semiconductor
Catalog	FETs - Single
Description	MOSFET N-CH 30V 8A 8-HUML
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Rohm Semiconductor
Packaging	Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) at 25°C	8A
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Maximum) at Id, Vgs	17.6mOhm at 8A, 10V
Vgs(th) (Maximum) at Id	2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	5.8nC at 10V
Maximum Vgs	±20V
Input Capacitance (Ciss) (Maximum) at Vds	295pF at 15V
Power Dissipation (Maximum)	2W
Temperature Range - Operating	150°C
Mounting Style	SMD
Supplier Device Package	HUML2020L8
Manufacturer Package	8-PowerUDFN
Manufacturer Pack Quantity	3,000
MSL Level	1 (Unlimited)
Popularity	High
Supply and Demand Status	Sufficient
Win Source Part Number	800676-RF4E080GNTR
Ultra Librarian 3D Model	Ultra Librarian RF4E080GNTR CAD Model

Alternative Products

Description

The MOSFET (Metal Oxide) N-Channel transistor is a high-quality electronic component designed for use in a variety of applications.

Drain to Source Voltage (Vdss): 30V
Power Dissipation (Maximum): 2W
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Operating Temperature: 150°C
Supplier Device Package: HUML2020L8
Manufacturer Package: 8-PowerUDFN
Gate Charge (Qg) (Maximum) @ Vgs: 5.8nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 295pF @ 15V
Packaging: Reel
Manufacturer Pack Quantity: 3,000

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
245+	$0.2391	$58.5795
590+	$0.1963	$115.8170
915+	$0.1901	$173.9415
1,260+	$0.1840	$231.8400
1,625+	$0.1779	$289.0875
2,175+	$0.1595	$346.9125

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 104,300 pieces

MOQ: 245 pcs

Order Increment : 1 pcs

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Expected Shipping Date	Ship today if order in (HKT)
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