ST expands its SLLIMM nano series of motor-driven intelligent power module (IPM) product lineups

ST expands its SLLIMMTM nano range of motor-driven intelligent power module (IPM) product lineups. In addition to a variety of optional packages that minimize the overall size of the application and minimize design complexity, the new product integrates more practical features and the latest 500V MOSFETs with higher energy efficiency.

The new IPM module has a rated output current of 1A or 2A, and the target application targets the motor drive market with a maximum power of 100W, such as refrigerator compressors, washing machine or dishwasher motors, drain pumps, circulating water pumps, fan motors, and hard-switching circuits. Motor drive with a frequency less than 20 kHz. The new product has a maximum operating temperature of 150 ° C and can work in harsh working environments.

The module integrates a three-phase MOSFET bridge and gate driver HVIC and utility functions, including an idle op amp and comparator for overcurrent protection and current measurement. Other built-in safety features include an interlock feature that prevents shoot-through current from burning the bridge MOSFET, as well as an error status output, shutdown input, and smart shutdown. An internal optional thermistor helps simplify the overheat protection circuit.

In addition to the toothed lead package, the new series also offers an in-line package that gives designers more flexibility in simplifying board design and minimizing controller size in electromechanical assemblies and other space-constrained applications.

The superior thermal performance of these packages, combined with the superior energy efficiency of ST's latest 500V MOSFETs, gives designers the flexibility to reduce heatsink size and develop low-power motor drive solutions without heat sinks. In both 2A and 1A products, the MOSFET's on-resistance is 3.6Ω and 1.7Ω, respectively, and low on-resistance combined with low switching losses ensure excellent overall energy efficiency in application design. The MOSFET is also equipped with an open emitter-to-module pin connection that simplifies the designer's use of vector-controlled (FOC) three-way shunts or trapezoidal-controlled single-channel shunts. The new module also integrates the bootstrap diodes required for high-side MOSFET gate control, further reducing the need for external components.

Author：Brittany Antonia （The author of article owns the copyright.）