Vishay Announces New 30V N-Channel TrenchFET Fourth Generation Power MOSFET - SiA468DJ

Recently, Vishay Intertechnology, Inc. (NYSE: VSH) announced the release of a new 30V N-Channel TrenchFET® fourth-generation power MOSFET, the SiA468DJ, which provides higher power density for mobile devices, consumer electronics and power supplies. And efficiency. The Vishay Siliconix SiA468DJ is available in an ultra-small PowerPAK® SC-70 package and is the industry's lowest on-resistance and highest continuous drain current in a 30mm device in a 2mm x 2mm plastic package.

Today's MOSFET is one of the smallest 30V products available today, 60% smaller than the PowerPAK 1212 package, in the laptop, tablet, VR helmet and DC-DC brick power supply, H-bridge in the wireless charger, and In the motor drive control of the drone, it can be used for load switching of DC/DC conversion and battery management.

The SiA468DJ has very low on-resistance of 8.4mΩ and 11.4mΩ at 10V and 4.5V, which reduces conduction losses and improves efficiency in these applications. Its on-resistance is 51% lower than the previous generation and 6% lower than the nearest competitor. In addition, the MOSFET's figure of merit (FOM) is optimized for a variety of power conversion topologies.

The SiA468DJ has a continuous drain current of up to 37.8A, which is 68% higher than previous generation devices and 50% higher than the nearest competitor. The high drain current provides sufficient safety margin for applications that experience high transient currents. The MOSFET is 100% RG tested, RoHS compliant, halogen free.

Relevant SIA4 series products

Author：Brittany Antonia （The author of article owns the copyright.）