Vishay's new 25V N-Channel Power MOSFETs increase power efficiency and power density

The device has a maximum on-resistance of 0.58mΩ at 10V and a gate charge of 61nC in a small form factor PowerPAK® SO-8 monolithic package

Vishay Intertechnology, Inc. today announced the SiRA20DP, the new 25V N-channel TrenchFET® Gen IV power MOSFET that offers the industry's lowest on-resistance of 10V at only 0.58mΩ. With the lowest gate charge and less than 0.6mΩ on-resistance, Vishay Siliconix SiRA20DP minimizes the gate-to-on resistance product product of the value of the figure of merit (FOM), enabling applications to increase efficiency and power density.

The MOSFET released today in a 6mm x 5mm PowerPAK® SO-8 package is currently one of two 25V MOSFETs with a maximum on-resistance of less than 0.6mΩ. The typical gate charge of SiRA20DP is lower than other similar devices, only 61nC, FOM is 0.035Ω * nC, low 32%. On-resistance of other 25V N-channel MOSFETs is 11% or more higher.

The low on-resistance of the SiRA20DP reduces conduction losses and increases system efficiency for higher power density, making it ideal for OR-ring functions in redundant power architectures. Lower FOM devices improve switching performance such as DC / DC conversion in communications and server power supplies, battery switching in battery systems, and load switching from 5V to 12V input supplies.

This MOSFET is 100% RG and UIS tested, RoHS compliant and halogen free.

SiRA20DP samples are now available, and mass production has been achieved, large orders for the supply cycle of 15 weeks.

More Vishay SiRA product family

 Author：Brittany Antonia （The author of article owns the copyright.）