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JAN2N5666S

Part No JAN2N5666S
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description TRANS NPN 200V 5A TO39
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features Bipolar (BJT) Transistor NPN 200 V 5 A - 1.2 W Through Hole TO-39 (TO-205AD)
Manufacturer Microchip Technology
Series Military, MIL-PRF-19500/455
Package Bulk
Operating Temperature Range -65°C ~ 200°C (TJ)
Mounting Through Hole
Package TO-205AD, TO-39-3 Metal Can
Case / Package TO-39 (TO-205AD)
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 1086-21066, 1086-21066-MIL
Quantity per package 1
Popularity High
Supply and Demand Status Balance
Win Source Part Number 922292-JAN2N5666S
Ultra Librarian 3D Model Ultra Librarian JAN2N5666S CAD Model

Description

Product Overview: JAN2N5666S - Microchip Technology

The JAN2N5666S is a high-quality, military-standard NPN silicon transistor designed and manufactured by Microchip Technology, a leading provider of smart, connected, and secure embedded control solutions. This robust transistor is specifically engineered to meet the stringent requirements of aerospace and defense applications, providing reliable performance even in the most challenging environments.

Key Features

  • High Power Capacity: The JAN2N5666S is capable of handling high power levels, making it suitable for a variety of demanding applications that require efficient power amplification.
  • Robust Performance: Designed to operate reliably under extreme conditions, this transistor can withstand significant variations in temperature, vibration, and radiation, ensuring consistent performance in critical missions.
  • Military Standards: This device complies with military specifications (MIL-PRF-19500/508), guaranteeing its quality and reliability for use in military and aerospace applications.
  • Versatile Application: The JAN2N5666S is ideal for high-speed switching and amplifier applications, offering versatility across various electronic circuits.
  • Hermetically Sealed: Packaged in a hermetically sealed metal case, the transistor is protected from moisture and contaminants, which could otherwise compromise its performance and longevity.

Technical Specifications

  • Type: NPN Silicon Transistor
  • Collector-Emitter Voltage (VCEO): 80V
  • Collector-Base Voltage (VCBO): 140V
  • Emitter-Base Voltage (VEBO): 7V
  • Collector Current (IC): 50A
  • Total Power Dissipation: Up to 200W
  • Operating Temperature Range: -65°C to +200°C
  • Package: TO-3

The JAN2N5666S transistor from Microchip Technology is not just a component; it's a reliable foundation upon which critical systems depend. With its combination of power, performance, and military-grade reliability, it stands as an exemplary choice for designers and engineers looking to integrate a trusted solution into their high-stakes applications.

Whether you're developing power regulators, RF amplifiers, or other sophisticated electronics, the JAN2N5666S offers the assurance and performance you need to succeed in the most demanding circumstances.

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