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MJ10012

Part No MJ10012
Manufacturer NTE
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 400V 10A TO3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr NTE
Package Bag
Product Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 10 A
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 2A, 10A
Current - Collector Cutoff (Max) 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 3A, 6V
Power - Max 175 W
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-3
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 231492-MJ10012
Ultra Librarian 3D Model Ultra Librarian MJ10012 CAD Model

Description

MJ10012 from NTE is a single bipolar junction transistor suited for engineers maintaining legacy designs, evaluating replacement options, or supporting general-purpose power and switching stages where a discrete BJT is required. In practical use, parts in this category are commonly considered for amplification, load driving, control circuitry, and repair environments where through-hole or discrete transistor solutions remain relevant. Its value is often strongest in service, replacement, and sustaining-engineering workflows, especially when teams need a recognizable manufacturer source for older transistor footprints or functionally similar circuit positions. Because the lifecycle status for MJ10012 is listed as unknown, buyers should treat supply continuity cautiously and confirm current availability before committing it into new production designs. RoHS compliance information is not available from the provided data, so environmental compliance should be verified through the official NTE datasheet, manufacturer statements, or authorized distributor documentation before procurement for regulated applications.

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