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BC856BW

Part No BC856BW
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Description Trans GP BJT PNP 65V 0.1A 200mW Automotive 3-Pin SC-70
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer NXP
Win Source Part Number 232270-BC856BW
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Family Name BC856W
Introduction Date September 01, 1994
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Product Status Active
Transistor Type PNP
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Power - Max 150mW
Frequency - Transition 100MHz
Operating Temperature 150°C (TJ)
Grade -
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SOT-323
Ultra Librarian 3D Model Ultra Librarian BC856BW CAD Model

Description

Product Overview: NXP BC856BW PNP Transistor

The NXP BC856BW is a PNP transistor that belongs to the BC856 series, known for its small signal amplification and switching capabilities. This particular transistor is designed for general-purpose applications and is widely used in various electronic circuits.

Key Features

  • Transistor Type: PNP - This indicates that the primary carriers for current are holes, making it suitable for use in positive ground configurations.
  • Package: SOT-323 - A compact surface-mount plastic package that is ideal for automated assembly processes and helps in saving board space.
  • Collector-Emitter Voltage (Vceo): 65V - This is the maximum voltage that can be applied across the collector-emitter terminals without causing damage to the transistor.
  • Collector Current (Ic): 100mA - The maximum continuous current that can flow through the collector of the transistor.
  • Power Dissipation (Pd): 250mW - The amount of power that the transistor can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): 125 - 475 - A measure of the transistor's ability to amplify the current, which is an essential parameter for many amplification applications.

Applications

The NXP BC856BW PNP transistor is highly versatile and can be used in a wide range of electronic circuits. Some common applications include:

  • Signal amplification in audio devices
  • Switching operations in digital circuits
  • Driver stages in amplifiers
  • Load management in power regulation modules
  • Control circuits in embedded systems

Quality and Reliability

NXP Semiconductors is renowned for its commitment to quality and reliability. The BC856BW PNP transistor is manufactured under strict quality control standards, ensuring consistent performance and durability for a wide range of electronic applications.

Whether you are designing a new electronic product or servicing existing equipment, the NXP BC856BW offers the performance and reliability needed to meet your circuit requirements.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,415+ $0.0354 $50.0910
3,015+ $0.0332 $100.0980
4,675+ $0.0321 $150.0675
6,715+ $0.0298 $200.1070
8,715+ $0.0287 $250.1205
10,870+ $0.0276 $300.0120
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 348,137 pieces
MOQ: 1415 pcs
Order Increment : 1 pcs
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