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STD110N02RT4G

Part No STD110N02RT4G
Manufacturer ON Semiconductor
Catalog FETs - Single
Description Power MOSFET | MOSFET N-CH 24V 32A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 24V
Id - Continuous Drain Current 32A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 4.6mOhm at 20A, 10V
Gate Source Voltage(th) (Maximum) at Id 2V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 28nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 3440pF at 20V
Power Dissipation (Maximum) 1.5W, 110W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package DPAK
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1260757-STD110N02RT4G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD110N02RT4G CAD Model

Description

Product Overview: STD110N02RT4G

The STD110N02RT4G is a high-performance, N-channel Power MOSFET brought to you by ON Semiconductor, a trusted leader in innovative energy-efficient semiconductor solutions. This MOSFET is designed to meet the rigorous requirements of today's electronic devices by providing efficient power management and high-speed switching capabilities.

Key Features

  • Low On-Resistance: The device features a low on-resistance, which translates to reduced voltage drops across the component when it is in the "on" state, leading to higher efficiency and lower heat generation.
  • High Continuous Drain Current: With a continuous drain current (ID) of up to 110 A, the STD110N02RT4G can handle high current applications, making it suitable for power-intensive modules.
  • Low Threshold Voltage: The low gate threshold voltage ensures that the MOSFET can be easily driven by low-voltage logic circuits, enhancing its compatibility with a wide range of control circuits.
  • Fast Switching Speed: The device is optimized for fast switching, thereby reducing transition losses and improving overall performance in applications that require rapid on-off cycling.
  • High Ruggedness: The STD110N02RT4G is built to withstand high energy pulses in the avalanche and commutation modes, ensuring reliability and longevity in harsh environments.

Applications

Due to its robustness and efficiency, the STD110N02RT4G is an excellent choice for a variety of applications, including:

  • DC-DC Converters
  • Power Management Systems
  • Motor Drives
  • Automotive Applications
  • Switching Regulators

Quality and Environmental Compliance

ON Semiconductor is committed to providing products that not only meet customer expectations but also comply with the highest quality and environmental standards. The STD110N02RT4G is RoHS compliant and manufactured with a "green" molding compound, making it an environmentally responsible choice for your power management needs.

Conclusion

The STD110N02RT4G from ON Semiconductor represents a blend of performance, efficiency, and reliability. Whether you're designing power systems for consumer electronics, automotive technology, or industrial applications, this Power MOSFET is engineered to deliver top-notch performance while maintaining energy efficiency and environmental sustainability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4163 $63.7335
100+ $1.1622 $116.2200
155+ $1.1258 $174.4990
215+ $1.0896 $234.2640
275+ $1.0531 $289.6025
370+ $0.9443 $349.3910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,010 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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