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HUF76639S3S

Part No HUF76639S3S
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 50A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 51A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 26mOhm at 51A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 86nC at 10V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 2400pF at 25V
Power Dissipation (Maximum) 180W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK (TO-263AB)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1182483-HUF76639S3S
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUF76639S3S CAD Model

Description

Product Overview: HUF76639S3S MOSFET

The HUF76639S3S is a high-performance N-Channel Power MOSFET produced by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to deliver efficient power management and conversion for a diverse range of applications including computing systems, power supplies, motor drives, and other electronic circuits requiring high-efficiency switching.

Key Features

  • Low On-Resistance: The HUF76639S3S boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Current Capability: This device is capable of handling high currents, making it suitable for high-power applications.
  • Robust Thermal Performance: With an enhanced package design, the HUF76639S3S ensures excellent thermal performance and reliability.
  • Fast Switching Speed: The MOSFET is engineered to provide fast switching, which is critical for reducing switching losses and improving performance in high-frequency circuits.

Specifications

Parameter Value V<sub>DS (Drain-Source Voltage) 100V I<sub>D (Continuous Drain Current) 56A R<sub>DS(on) 8.0 mΩ Package TO-263 (D2PAK)

Applications

The versatile HUF76639S3S MOSFET is ideal for a broad spectrum of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • Power Inverter Systems
  • Automotive Environment Systems

ON Semiconductor's HUF76639S3S is a testament to the company's commitment to providing advanced semiconductor solutions that meet the demands of modern electronic designs. Its robustness, efficiency, and high performance make it an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8166 $61.2450
175+ $0.6699 $117.2325
270+ $0.6491 $175.2570
370+ $0.6283 $232.4710
480+ $0.6075 $291.6000
640+ $0.5440 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,500 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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