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2SB976

Part No 2SB976
Manufacturer Panasonic
Catalog Hard To Find
Description Silicon PNP epitaxial planer type(For low-frequency output amplification)
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Panasonic
Win Source Part Number 1125087-2SB976
Manufacturer Homepage www.panasonic.com/industrial/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SB976 CAD Model

Description

The 2SB976 is a PNP silicon epitaxial transistor manufactured by Panasonic. It is designed for use in low-frequency power amplification applications. This transistor is noted for its low saturation voltage and high current capability, making it suitable for applications requiring efficient power handling.

Applications:

  • Audio Amplifiers: Used in the output stages of audio amplifiers to deliver power to the speakers.
  • DC-DC Converters: Employed in DC-DC converters for switching and regulation purposes.
  • Power Supplies: Utilized in linear power supplies as a pass transistor to regulate the output voltage.
  • Motor Control: Can be used in basic motor control circuits to drive small DC motors.

Features:

  • High Collector Current: Capable of handling collector currents up to -3A.
  • Low Saturation Voltage: Ensures efficient power handling with minimal voltage drop.
  • High Power Dissipation: Can dissipate a significant amount of power, up to 1.2W.
  • PNP Silicon Epitaxial Transistor: Offers reliable and consistent performance.

Benefits:

  • Efficient Power Amplification: The low saturation voltage ensures efficient power transfer, reducing heat generation.
  • Versatile Application: Suitable for a wide range of low-frequency power applications.
  • Reliable Performance: Panasonic's manufacturing ensures consistent and reliable operation.
  • Easy to Integrate: Can be easily integrated into existing circuits due to its standard package and specifications.

The 2SB976 is typically available in a small signal package. Its key specifications include a collector-base voltage (VCBO) of -60V, a collector-emitter voltage (VCEO) of -50V, and an emitter-base voltage (VEBO) of -5V. The transistor has a DC current gain (hFE) that varies depending on the collector current. It is important to consult the datasheet for precise values and operating conditions to ensure optimal performance.

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