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STGW30N90D

Part No STGW30N90D
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 900V 60A 220W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 900V
Maximum Current Collector 60A
Pulsed Collector Current 135A
Collector-emitter saturation voltage(Max) 2.75V @ 15V, 20A
Maximum Power Dissipation 220W
Total Switching Energy(Ets) 1.66mJ (on), 4.44mJ (off)
Input Type Standard
Gate Charge 110nC
Turn-on and Turn-off delay time 29ns/275ns
Testing Conditions 900V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) 152ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Win Source Part Number 212283-STGW30N90D
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STGW30N90D CAD Model

Description

    

The STGW30N90D is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This high-performance MOSFET is part of ST's advanced MDmesh™ series, which is well-known for its excellent energy efficiency and high power density. The STGW30N90D is specifically engineered to address the demanding requirements of modern high-power switching applications.

  

Key Features

  
        
  • High Voltage Capability: The STGW30N90D boasts a high breakdown voltage of 900V, making it suitable for high voltage applications.
  •     
  • Low On-Resistance: With an RDS(on) value as low as 0.29 ohms, this MOSFET ensures minimal conduction losses and is ideal for high-efficiency power supplies.
  •     
  • Fast Switching Speed: The device features fast switching characteristics, which reduces switching losses and improves overall performance in high-frequency circuits.
  •     
  • MDmesh™ Technology: This proprietary technology from STMicroelectronics provides a perfect blend of low on-resistance and high switching speed, while also minimizing gate charge (Qg) for better switching performance.
  •     
  • Improved Ruggedness: The STGW30N90D is designed to withstand harsh conditions, making it highly reliable in industrial applications.
  •     
  • Reduced Gate Charge: The device's optimized gate charge allows for efficient switching at high frequencies, which is crucial for power conversion applications.
  •   
  

Applications

  

The STGW30N90D is versatile and can be used in a wide range of applications, including:

  
        
  • Switch Mode Power Supplies (SMPS)
  •     
  • Uninterruptible Power Supplies (UPS)
  •     
  • High-performance DC-AC inverters
  •     
  • Power Factor Correction (PFC) circuits
  •     
  • Lighting applications, such as LED drivers
  •     
  • Welding equipment
  •   
  

With its robust design and superior electrical characteristics, the STGW30N90D is a perfect choice for designers looking to create efficient, reliable, and compact power management solutions. Whether for industrial, consumer, or high-tech applications, this power MOSFET from STMicroelectronics stands out as a top-tier component in its class.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2617 $58.7106
44+ $2.6761 $117.7484
67+ $2.5930 $173.7310
93+ $2.5087 $233.3091
120+ $2.4255 $291.0600
160+ $2.1749 $347.9840
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Availability: 9,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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