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EPC2019

Part No EPC2019
Manufacturer EPC
Catalog Transistors - FETs, MOSFETs - RF
Description GANFET N-CH 200V 8.5A DIE / N-Channel 200 V 8.5A (Ta) Surface Mount Die
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr EPC
Series eGaN®
Package Tape & Reel
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 42mOhm @ 7A, 5V
Vgs(th) (Max) @ Id 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 2.9 nC @ 5 V
Vgs (Max) +6V, -4V
Input Capacitance (Ciss) (Max) @ Vds 288 pF @ 100 V
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package Die
Package / Case Die
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0040
Other Names 917-1087-1,917-1087-2,917-1087-6
Standard Package 1,000
Win Source Part Number 1005945-EPC2019
Ultra Librarian 3D Model Ultra Librarian EPC2019 CAD Model

Description

The EPC2019 is a GaNFET (Gallium Nitride) N-channel transistor from EPC.

  • Drain to Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id): 8.5A (Ta) @ 25°C
  • Maximum Rds On: 42mOhm @ 7A, 5V
  • Maximum Vgs(th): 2.5V @ 1.5mA
  • Gate Charge (Qg) (Max): 2.9 nC @ 5V
  • Input Capacitance (Ciss) (Max): 288 pF @ 100Vds
  • Package: Die
  • Operating Temperature Range: -40°C to 150°C (TJ)
  • MSL Level: 1 (Unlimited)
  • HTSUS: 8541.29.0040
  • Also Known As: 917-1087-1, 917-1087-2, 917-1087-6
  • Maximum Drive Voltage: 5V

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3657 $52.3884
28+ $3.5821 $100.2988
44+ $3.4702 $152.6888
60+ $3.3583 $201.4980
78+ $3.2463 $253.2114
104+ $2.9105 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,611 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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