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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 40V
Id - Continuous Drain Current 100A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 9mOhm at 60A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 93nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2900pF at 25V
Power Dissipation (Maximum) 2.4W, 170W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186875-IRF1104L
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF1104L CAD Model

Description

The Infineon Technologies IRF1104L is an N-channel MOSFET that is designed for use in various applications such as motor control, power supplies, and DC-DC converters.

  • Maximum Power Dissipation: 2.4W
  • Continuous Drain Current: 100A
  • Maximum Drain-Source Breakdown Voltage: 40V
  • Gate-Source Voltage: ±20V
  • Popularity: Medium
  • Supply and Demand: Limited
  • Manufacturer Pack Quantity: 50
  • MSL Level: 1 (unlimited)

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