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JAN2N5303

Part No JAN2N5303
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description NPN TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 34 Weeks
Features Bipolar (BJT) Transistor NPN 60 V 10 µA - 20 W Through Hole TO-3
Manufacturer Microchip Technology
Series Military, MIL-PRF-19500/456
Package Bulk
Operating Temperature Range -65°C ~ 200°C (TJ)
Mounting Through Hole
Package TO-204AA, TO-3
Case / Package TO-3
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 1
Popularity High
Supply and Demand Status Balance
Win Source Part Number 922291-JAN2N5303
Ultra Librarian 3D Model Ultra Librarian JAN2N5303 CAD Model

Description

Microchip Technology's JAN2N5303 NPN Power Transistor

The JAN2N5303 is a high-quality NPN power transistor designed and manufactured by Microchip Technology, a leader in the semiconductor industry. This robust component is built to meet stringent requirements, making it an ideal choice for a variety of demanding applications in the aerospace and defense sectors. The JAN2N5303 is specifically engineered for high-reliability environments where performance and durability are critical.

This NPN transistor is characterized by its high power dissipation capabilities, which allows it to handle significant amounts of power without compromising its performance or longevity. With a collector-emitter voltage (Vceo) of 80V and a collector current (Ic) rating of up to 20A, the JAN2N5303 is well-suited for power regulation and switching applications where high currents are necessary.

The JAN2N5303 also features a low collector-emitter saturation voltage, which enhances its efficiency by minimizing power loss during operation. This makes it an energy-efficient choice for power amplifiers, DC-DC converters, and other power control circuits. The device's high current gain bandwidth product further ensures that it can handle high-frequency signals without significant distortion, making it suitable for RF amplification purposes.

Constructed with Microchip's proven silicon technology, the JAN2N5303 is designed to withstand extreme temperatures and harsh environmental conditions, maintaining its integrity and functionality. It comes in a hermetically sealed metal package, which provides excellent thermal conductivity and shields the transistor from mechanical damage and chemical corrosion.

In compliance with the Joint Army-Navy Specifications (JAN), the JAN2N5303 is a part of the Qualified Products List (QPL), ensuring that it meets the rigorous standards set by the United States Department of Defense for military-grade components. This qualification underscores the reliability and quality of the JAN2N5303, making it a trusted choice for mission-critical systems where failure is not an option.

Whether you're designing power supplies, motor controllers, or communication equipment, the JAN2N5303 from Microchip Technology offers the performance, reliability, and quality necessary for your high-stakes applications.

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