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ZX5T851GQTC

Part No ZX5T851GQTC
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description PWR LOW SAT TRANSISTOR SOT223 T&
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 6 A
Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 260mV @ 300mA, 6A
Current - Collector Cutoff (Max) 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 1V
Power - Max 1.2 W
Frequency - Transition 130MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223-3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1377115-ZX5T851GQTC
Ultra Librarian 3D Model Ultra Librarian ZX5T851GQTC CAD Model

Description

The ZX5T851GQTC is a state-of-the-art P-channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This high-performance transistor is designed to meet the rigorous demands of modern electronic circuits, providing efficient power management and signal amplification across a wide range of applications.

Key Features

  • Low Threshold Voltage: The ZX5T851GQTC boasts a low threshold voltage, which ensures that it can be easily driven by low-voltage logic circuits, making it ideal for battery-operated devices and power-sensitive applications.
  • High Efficiency: With its low on-resistance, this MOSFET ensures minimal power loss during operation, translating into better energy efficiency and longer battery life in portable applications.
  • High Current Capability: This device is capable of handling continuous drain currents, making it suitable for high-current applications such as power supplies and motor control circuits.
  • Thermal Management: The ZX5T851GQTC is housed in a thermally efficient package that aids in heat dissipation, ensuring reliable performance even under high-temperature conditions.
  • Robustness: Built to withstand voltage transients and designed with inherent ruggedness, this MOSFET provides reliable operation and a long service life.

Applications

The versatility of the ZX5T851GQTC makes it an excellent choice for a variety of applications, including:

  • Power Management Circuits
  • Load Switching
  • DC-DC Converters
  • Battery Management Systems
  • Motor Control Units

Quality and Reliability

Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability. The ZX5T851GQTC is no exception, as it undergoes rigorous testing and quality control procedures to ensure that it performs to specifications in a variety of environmental conditions.

Conclusion

With its combination of efficiency, power-handling capability, and robust design, the ZX5T851GQTC from Diodes Incorporated stands out as a superior choice for designers looking for a reliable P-channel MOSFET. Whether it's for power regulation, load switching, or any other application that requires high performance and dependability, the ZX5T851GQTC is an excellent component to consider.

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Pricing & Ordering

Quantity Unit Price Ext. Price
160+ $0.3144 $50.3040
390+ $0.2580 $100.6200
605+ $0.2499 $151.1895
830+ $0.2418 $200.6940
1,070+ $0.2338 $250.1660
1,435+ $0.2096 $300.7760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,900 pieces
MOQ: 160 pcs
Order Increment : 1 pcs
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